The IGBT SiC static testing system consists of high-voltage power supply units, fixture units, measurement units, and control units. It covers key static test parameters such as gate leakage current, gate threshold voltage, breakdown voltage, off-state current, diode forward voltage drop, transconductance, and NTC resistance. Additionally, it can provide rapid temperature variation scenarios ranging from -40°C to 150°C, suitable for automotive-grade testing applications. Modular fixtures and adapters are available for various packaging forms, meeting the testing needs for SiC single transistors and IGBT assembly modules. The entire system can automatically generate key parameter curve tracking, such as CV curves and IV curves.